Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low . Beställ idag, leverans imorgon! Drain-source Voltage ( VGS = 0). IMPORTANT – READ BEFORE DOWNLOADING, COPYING, INSTALLING, OR USING. DO NOT DOWNLOA COPY, INSTALL, OR USE .

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Continuous Current = Amps. MOSFET and the drain source voltage is 250V.

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Suas Características: Vdss = 2V (Max). I hope someone has input, or perhaps experiance with this. V, 18A, Rds on 1Mohm typical. These are N-Channel enhansement mode silicon gate . IRF6, RF1S64RF1S640SM. Uds: 2V, Idss: A, Pd: 1W, Rds: Ohm Unipolární tranzistor N-Kanál, Provedení: Vývodové, Idss = A, Vds = 2V, Pd = 1W, Rds = Ohm, . Gyártó, INTERNATIONAL RECTIFIER, Infineon (IRF).

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