IRF7, SiHF7Datasheet. ABSOLUTE MAXIMUM RATINGS (TC = °C, unless otherwise noted). Parameters and Characteristics. Electronic Component Catalog.

Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, . Check stock and pricing, view product specifications, and order online.

R drain-source on-resistance, 10A drain current, 20V gate source voltage, 125W . Power MOSFET, N-Channel type, 400V drain-source breakdown voltage, 0. Widely used to switch between low . MOSFET and the drain source voltage is 400V. I took my ignition coil, and. View datasheets, stock and pricing, or find other MOSFETs. A) (V) (V) (W) (A) (V) (V) (A) (A).

Continuous Current = Amps.

The threshold voltage is the minimum voltage required so that the transistor starts to conduct. And you need more than this to put it into . This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power . Pulse width limited by safe operating area. Opis: N-tip, 400V, 10A, 125W, Rds: 0. Wyprzedaż irf7od Chińskich irf7Hurtowników Katalog.

Váš dodavatel elektronických součástek! Be the first to review “Mosfet Irf7” Cancel reply. We will send payment cleared orders out of our facility within . KiB )Download file converted to the latest EAGLE format ( 3 KiB ). Uds: 4V, Idss: A, Pd: 1W, Rds: Ohm Unipolární tranzistor N-Kanál, Provedení: Vývodové, Idss = A, Vds = 4V, Pd = 1W, Rds = Ohm, . Visita eBay per trovare una vasta selezione di irf740.

Készleten van Kiskereskedelmi ár. N csatornás teljesítmény mosfet, . Search (manufacturer PN): BC547. Footprint Package: TO-220AB.